技術支援

技術支援

技術報告

會議名稱 年度 論文名稱 發表時間 場次 說明
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2013 A novel 4H-SiC trench MOS barrier Schottky rectifier fabricated by a two-mask process 2013.05 Session WB-P 本公司研究團隊於工研院時期發表在功率元件最大型之國際研討會議論文。此論文展現低成本方式達成高耐壓之TMBS二極體元件 
2014 Simulation and Characteristics of 4H-SiC Termination with P-Well Enclosure in P-Plus Floating Guard Rings for 1700V DMOSFETs 2014.06    
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2013 SiC epi-channel lateral MOSFETs 2013.09 Session 
Th-P
碳化矽及相關材料最為著名之國際研討會議論文。此論文展現以埋層通道獲得高電子移動率之DMOS元件 
Comparative study of 4H-SiC DMOSFETs with N2O thermal oxide and deposited oxide with post oxidation anneal 2013.09

Session 
We-P

碳化矽及相關材料最為著名之國際研討會會議論文。本論文展現DMOS元件之閘層氧化缺陷與製程改良探討
會議名稱 年度 論文名稱 作者 發表時間
European conference on silicon carbide & related materials (ECSCRM) 2012 An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier K. W. Chu, C. T. Yen, Patrick Chung, C. Y. Lee, Tony Huang, C. F. H. Huang 2012.09
Important Parameters affecting the Accurate Simulation on Mobility and Threshold Voltage of SiC MOSFET C. Y. Lee , C. C. Hung, Y. S. Chen, C. T. Yen, L. S. Lee 2012.09
Simulation and optimization of 4H-SiC DMOSFET power transistors C. C. Hung, Y. S. Chen, C. T. Yen, C. Y. Lee, L. S. Lee, M.J. Tsai 2012.09
International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech) 2012 Novel Normally-off GaN HEMT Device Structure by Using Nano-rods Technology C. Y. Lee, C. C. Hung, L. S. Lee, C. T. Yen, S. F. Lin, R. Xuan, W. H. Kuo, T. K. Ku, M. J. Tsai 2012.04
Characteristics of 4H-SiC Dual Metal and MOS Trench Schottky Rectifiers C. T. Yen, Y. S. Chen, C. Y. Lee, C. C. Hung, L. S. Lee, T. M. Yang, K. W. Chu, M. J. Tsai, T. K. Ku 2012.04
MRS Fall Meeting 2011 Performance Comparison and Design Issue on Different GaN Power Transistor Structures C. Y. Lee, Y. S. Chen, L. S. Lee, C. C. Hung, C. T. Yen, S. F. Lin, R. Xuan, W. H. Kuo, T. K. Ku, M. J. Tsai 2011
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2011 Performance Comparison of GaN Power Transistors and Investigation on the Device Design Issues C. Y. Lee, Y. H. Chen, L. S. Lee, C. C. Hung, C. T. Yen, S. F. Lin, R. Xuan, W. H. Kuo, T. K. Ku, M. J. Tsai 2011.09